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LITE-ON SEMICONDUCTOR
TB0640L thru TB3500L
Bi-Directional VDRM IPP - 58 to 320 Volts - 30 Amperes
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 30A @ 10/1000us or 150A @ 8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0
SMB
SMB A DIM. A B B C C D E MIN. 4.06 3.30 1.96 0.15 5.21 0.05 2.01 0.76 MAX. 4.57 3.94 2.21 0.31 5.59 0.20 2.62 1.52
MECHANICAL DATA
Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.003 ounces, 0.093 grams
G H E F D
F G H
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range SYMBOL VALUE UNIT A A
IPP ITSM TJ TSTG
30 15 -40 to +150 -55 to +150
THERMAL RESISTANCE
CHARACTERISTICS Junction to leads Junction to ambient on print circuit (on recommended pad layout) Typical positive temperature coefficient for brekdown voltage SYMBOL VALUE UNIT /W /W %/
Rth(J-L) Rth(J-A) VBR/TJ
30 120 0.1
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE IPP (A) 200 150 100 60 50 30
IPP, PEAK PULSE CURRENT (%)
100
Peak value (Ipp) tr= rise time to peak value tp= Decay time to half value
50
Half value
0 tr tp
TIME
REV. 0, 15-Nov-2001, KSWB05
ELECTRICAL CHARACTERISTICS @ TA= 25 unless otherwise specified TB0640L thru TB3500L
PARAMETER
RATED REPETITIVE OFF-STATE VOLTAGE
OFF-STATE LEAKAGE CURRENT @ VDRM
BREAKOVER VOLTAGE
ON-STATE VOLTAGE @ IT=1.0A
BREAKOVER CURRENT
HOLDING CURRENT
OFF-STATE CAPACITANCE
SYMBOL UNITS
VDRM Volts
IDRM uA
VBO Volts
VT Volts
IBOmA
IBO+ mA
IHmA
IH+ mA
Co pF
LIMIT
Max
Max
Max
Max
Min
Max
Min
Max
Typ
TB0640L TB0720L TB0900L TB1100L TB1300L TB1500L TB1800L TB2300L TB2600L TB3100L TB3500L
58 65 75 90 120 140 160 190 220 275 320
5 5 5 5 5 5 5 5 5 5 5
77 88 98 130 160 180 220 265 300 350 400
3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5
50 50 50 50 50 50 50 50 50 50 50
800 800 800 800 800 800 800 800 800 800 800
150 150 150 150 150 150 150 150 150 150 150
800 800 800 800 800 800 800 800 800 800 800
100 100 100 60 60 60 60 40 40 40 40
SYMBOL VDRM IDRM VBR IBR VBO IBO IH VT IPP CO
PARAMETER Stand-off Voltage Leakage current at stand-off voltage Breakdown voltage Breakdown current IBR Breakover voltage Breakover current IBO IH IDRM IPP
I
V VT VBR VDRM VBO
Holding current On state voltage Peak pulse current Off state capacitance
Note: 1
Note: 2
REV. 0, 15-Nov-2001, KSWB05
NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state. The Surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias.
RATING AND CHARACTERISTICS CURVES TB0640L thru TB3500L
FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
100 1.20
NORMALIZED BREAKDOWN VOLTAGE
I(DRM), OFF STATE CURRENT (uA)
1.15
10
1.10
VBR (TJ) VBR (TJ=25)
1.0
VDRM=50V
1.05
0.1
1.0
0.01
0.95
0.001 -25
0
25
50
75
100
125
150
0.90 -50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE ()
TJ, JUNCTION TEMPERATURE ()
FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE
1.10
FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE
100
NORMALIZED BREAKOVER VOLTAGE
1.05
VBO (TJ) VBO (TJ=25)
I(T), ON STATE CURRENT
10
1.0
TJ = 25
0.95 -50
1
-25
0
25
50
75
100
125
150
175
1
2
3
4
5
6
7
8
9
TJ, JUNCTION TEMPERATURE ()
V (T); ON STATE VOLTAGE
FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT vs JUNCTION TEMPERATURE
2 1
FIG. 6 - RELATIVE VARIATION OF JUNCTION CAPACITANCE vs REVERSE VOLTAGE BIAS
NORMALIZED HOLDING CURRENT
1.5
1
IH (TJ) IH (TJ=25)
0.5
NORMALIZE CAPACITANCE
CO(VR) CO(VR = 1V)
Tj =25 f=1MHz VRMS = 1V
0 -50 -25 0 25 50 75 100 125
0.1 1 10 100
TJ, JUNCTION TEMPERATURE ()
VR, REVERSE VOLTAGE
REV. 0, 15-Nov-2001, KSWB05
TYPICAL CIRCUIT APPLICATIONS TB0640L thru TB3500L
FUSE RING
TSPD 1
TELECOM EQUIPMENT E.G. MODEM
TIP
RING
PTC TSPD 1
TELECOM EQUIPMENT E.G. ISDN
TSPD 2 TIP PTC
RING
PTC TSPD 2 TSPD 1 TSPD 3
TELECOM EQUIPMENT E.G. LINE CARD
TIP
PTC
The PTC (Positive Temperature Coefficient) is an overcurrent protection device
REV. 0, 15-Nov-2001, KSWB05

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